Over-driving circuit for semiconductor memory device

Details Over-driving circuit for semiconductor memory device Over-driving circuit for semiconductor memory device

2006-09-28

2008-11-04

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Powering

C365S196000, C365S191000, C365S207000

Reexamination Certificate

active

07447100

ABSTRACT:
An over-driving circuit for a semiconductor memory device is capable of rapidly securing a sensing operation of a bit line sense amplifier regardless of a level change of a power supply voltage. Timings are adjusted for supplying an over-driving voltage and for discharging based on a level change of a power supply voltage if a level thereof is changed when a bit line over-driving operation is in progress, thereby preventing an efficiency reduction of the over-driving operation.

REFERENCES:
patent: 6122212 (2000-09-01), Bui et al.
patent: 6314028 (2001-11-01), Kono
patent: 6333670 (2001-12-01), Kono et al.
patent: 6347058 (2002-02-01), Houghton et al.
patent: 6853593 (2005-02-01), Bae
patent: 7020043 (2006-03-01), Lee
patent: 2005/0243624 (2005-11-01), Jang
patent: 10-2005-0009012 (2005-01-01), None
Korean Patent Gazette issued in Korean Patent Application No. KR 10-0798765, dated Jan. 22, 2008.

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