Over-current detection for a power field-effect transistor...

Details Over-current detection for a power field-effect transistor... Over-current detection for a power field-effect transistor...

2008-01-08

2008-01-08

Nguyen, Khanh Van (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including class d amplifier

C330S20700P

Reexamination Certificate

active

11125968

ABSTRACT:
A system and method is provided for detecting an over-current condition in a power field-effect transistor (FET). In one embodiment, an over-current detection circuit for detecting an over-current condition in a power FET comprises a current generator circuit operative to generate a reference current and a plurality of matched FETs operative to receive the reference current and provide a reference voltage, the matched FETs being matched to each other and to the power FET. The over-current detection circuit also comprises a comparator operative to measure a drain-to-source voltage of the power FET and to provide an output that indicates that the drain-to-source voltage of the power FET has exceeded the reference voltage.

REFERENCES:
patent: 7068095 (2006-06-01), Bernardon
patent: 02003283314 (2003-10-01), None

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