Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
1995-06-07
2001-03-13
Munson, Gene M. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C377S060000
Reexamination Certificate
active
06201268
ABSTRACT:
SUMMARY OF THE INVENTION
It is, therefore, an object of the present invention to overcome the problems existing in the conventional charge-coupled device and to provide an improved output structure of the charge-coupled device with which the charge-voltage conversion efficiency of the output structure can be enhanced.
According to one aspect of the invention, there is provided a charge-coupled device having a function wherein a charge-voltage conversion is performed by transferring a signal electron charge transferred from a charge transfer section formed in a semiconductor layer of a first-conductivity type to a floating diffusion layer section of a semiconductor region of a second-conductivity type, the charge-coupled device comprising:
a first well layer of the first-conductivity type which forms the charge transfer section; and
a second well layer of the first-conductivity type which forms the floating diffusion layer section and within which the first well layer is formed,
the second well layer below the floating diffusion layer section having an impurity concentration lower than that of the first well layer whereby a depletion layer formed therein by a PN-junction flares in a direction to the second well layer.
REFERENCES:
patent: 4660064 (1987-04-01), Hamasaki
patent: 4698656 (1987-10-01), Kamata
patent: 5103278 (1992-04-01), Miwada
patent: 5239192 (1993-08-01), Hirota
Laff, Whitesel & Saret, Ltd.
Munson Gene M.
NEC Corporation
Whitesel J. Warren
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