Output power control of an RF amplifier

Details Output power control of an RF amplifier Output power control of an RF amplifier

2007-05-11

2009-02-10

Nguyen, Khanh V (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including gain control means

C330S289000, C330S296000

Reexamination Certificate

active

07489196

ABSTRACT:
Precision and reliability of a current limited mode output power control of an RF amplifier is enhanced by sensing the base current of the current controlled output power transistor. The base current is compared to a control current that is normalized by scaling it as a function of the current gain of a bipolar junction transistor of similar characteristics as the output power transistor. Fabrication process spread of current gain figures of bipolar junction transistors is effectively compensated. Moreover, by using a band-gap temperature compensation control current that is eventually β-scaled before comparing it with the sensed base current of the output power transistor, the output power may be effectively controlled and maintained constant over temperature as well as process spread variations.

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Jarvinen et al., Bias Circuits for GaAs HBT Power Amplifiers, Microwave Symposium Digest, 2001 IEEE, MIT-S International, vol. 1, May 20, 2001, pp. 507-510.

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