Amplifiers – With semiconductor amplifying device – Including frequency-responsive means in the signal...
Reexamination Certificate
2008-05-13
2008-05-13
Nguyen, Khanh Van (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including frequency-responsive means in the signal...
C330S066000
Reexamination Certificate
active
11189615
ABSTRACT:
A power transistor, having: a semiconductor having an electrode formed thereon, wherein the electrode comprises a plurality of interdigitated transistors each having input and output terminals; a first output blocking capacitor having a first terminal electrically coupled to the output terminals of the interdigitated transistors of the semiconductor and a second terminal electrically coupled to ground; and a second output blocking capacitor having a first terminal electrically coupled to the first terminal of the first output blocking capacitor and a second terminal electrically coupled to ground. A method for amplifying signals, the method having: forming a power transistor on a semiconductor, wherein the power transistor comprises a plurality of interdigitated transistors; shunting an output signal from the plurality of interdigitated transistors; and double-shunting an output signal from the plurality of interdigitated transistors, wherein the shunting and double-shunting generates first and second harmonic terminations at a die plane of the power transistor.
REFERENCES:
patent: 4580114 (1986-04-01), Upadhyayula
patent: 6099677 (2000-08-01), Logothetis et al.
patent: 6177834 (2001-01-01), Blair et al.
patent: 6466094 (2002-10-01), Leighton et al.
patent: 6614308 (2003-09-01), Moller et al.
patent: 6734728 (2004-05-01), Leighton et al.
patent: 6777791 (2004-08-01), Leighton et al.
patent: 6822321 (2004-11-01), Crescenzi, Jr.
patent: 7138872 (2006-11-01), Blednov
patent: 7158386 (2007-01-01), Shih et al.
patent: 95/31037 (1995-11-01), None
Partial European Search Report for European Application No. EP 06015435 (4 pages).
Blair Cindy
Dixit Nagaraj V.
Moller Thomas
Pham Tan
Coats & Bennett P.L.L.C.
Infineon - Technologies AG
Nguyen Khanh Van
LandOfFree
Output match transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Output match transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Output match transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3955807