Amplifiers – With semiconductor amplifying device – Including frequency-responsive means in the signal...
Reexamination Certificate
2008-05-13
2008-05-13
Nguyen, Khanh Van (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including frequency-responsive means in the signal...
C330S066000
Reexamination Certificate
active
07372334
ABSTRACT:
A power transistor, having: a semiconductor having an electrode formed thereon, wherein the electrode comprises a plurality of interdigitated transistors each having input and output terminals; a first output blocking capacitor having a first terminal electrically coupled to the output terminals of the interdigitated transistors of the semiconductor and a second terminal electrically coupled to ground; and a second output blocking capacitor having a first terminal electrically coupled to the first terminal of the first output blocking capacitor and a second terminal electrically coupled to ground. A method for amplifying signals, the method having: forming a power transistor on a semiconductor, wherein the power transistor comprises a plurality of interdigitated transistors; shunting an output signal from the plurality of interdigitated transistors; and double-shunting an output signal from the plurality of interdigitated transistors, wherein the shunting and double-shunting generates first and second harmonic terminations at a die plane of the power transistor.
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Partial European Search Report for European Application No. EP 06015435 (4 pages).
Blair Cindy
Dixit Nagaraj V.
Moller Thomas
Pham Tan
Coats & Bennett P.L.L.C.
Infineon - Technologies AG
Nguyen Khanh Van
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