Output gate for a semiconductor IC

Details Output gate for a semiconductor IC Output gate for a semiconductor IC

1992-08-26

1994-02-22

Kwon, John T.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307584, 307585, H03K 500

Patent

active

052890619

ABSTRACT:
An output gate according to the present invention includes a CMOS gate composed of a P-MOS transistor connected at a source to an external power supply and a first N-MOS transistor connected at a source to ground, and a second N-MOS transistor connected between ground and the first N-MOS transistor by a source-drain path. The second N-MOS transistor is connected at a gate to an external power supply.

REFERENCES:
patent: 4721866 (1988-01-01), Chi et al.
patent: 4914326 (1990-04-01), Kikuda et al.
patent: 4987324 (1991-01-01), Wong et al.
patent: 5063313 (1991-11-01), Kikuda et al.
patent: 5068553 (1991-11-01), Love
patent: 5146120 (1992-09-01), Kimura et al.
patent: 5155382 (1992-10-01), Madden et al.
patent: 5187686 (1993-02-01), Tran et al.

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