Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means
Patent
1997-02-04
1998-05-19
Leja, Ronald W.
Electricity: electrical systems and devices
Safety and protection of systems and devices
Load shunting by fault responsive means
361 91, H02H 900
Patent
active
057543810
ABSTRACT:
An output buffer in a CMOS circuit includes an output pad; a VDD line which supplies a first supply voltage; a VSS line which supplies a second supply voltage; a first MOS device connected between the VDD line and the output pad; a second MOS device connected between the VSS line and the output pad; a lateral SCR device connected from the output pad to one of the VDD and VSS lines and in parallel with one of the first and second MOS devices; and a bypass diode connected to the other of the VDD and VSS lines and to the lateral SCR device.
REFERENCES:
patent: 4734752 (1988-03-01), Liu et al.
patent: 5019888 (1991-05-01), Scott et al.
patent: 5218222 (1993-06-01), Roberts
patent: 5270565 (1993-12-01), Lee et al.
patent: 5329143 (1994-07-01), Chan et al.
patent: 5600525 (1997-02-01), Avery
Duvvury et al., "ESD: A pervasive Reliability Concern for IC Technologies", Proceedings of the IEEE, 81(5):690-702, (1993) May.
Chatterjee et al., "A Low-Voltage Triggering SCR for On-Chip ESD Protection at Output and Input Pads" IEEE Electron Device Letters, 12(1):21-22, (1991) Jan.
Chatterjee et al., "A Low-Voltage Triggering SCR for On-Chip ESD Protection at Output and Input Pads", IEEE, Symposium on VLSI Technology, 75-76, (1990) No Month.
Ming-Dou Ker et al., "Area-Efficient CMOS Output Buffer with Enhanced High ESD Reliability for Deep Submicron CMOS ASIC", IEEE, 123-126, (1995) No Month.
Ming-Dou Ker et al., "Complementary-LVTSCR ESD Protection Circuit for Submicron CMOS VLSI/ULSI", IEEE Transactions on Electron Devices, 43(4):1-12, (1996) Apr.
Johnson et al., "Two Unusual HBM ESD Failure Mechanisms on a Mature CMOS Process", EOS/ESD Symposium 93-225, 5B.4.1-5B.4.7, No Date.
Industrial Technology Research Institute
Leja Ronald W.
LandOfFree
Output ESD protection with high-current-triggered lateral SCR does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Output ESD protection with high-current-triggered lateral SCR, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Output ESD protection with high-current-triggered lateral SCR will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1858820