Output driver circuit in semiconductor device

Details Output driver circuit in semiconductor device Output driver circuit in semiconductor device

1997-09-17

1999-08-10

Ton, My-Trang Nu

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

327112, H03K 17687

Patent

active

059364564

ABSTRACT:
A power-supply circuit 121 generates a potential Vw which is approximately the higher of a power-supply potential VDD and a potential Vo at an output to set the potential Vw at an N-well of a pMOS pull-up transistor Qu equal to or higher than the potential at the source S and the drain D of the pMOS transistor Qu. The power-supply circuit 122 generates a potential Vs approximately equal to VDD--Vth when Vo<VDD, and turns off when Vo>VDD to prevent a current from flowing from the output OUT through the pMOS transistor Qu to the power-supply potential VDD, where Vth is the threshold voltage of the MOS transistors.

REFERENCES:
patent: 4782250 (1988-11-01), Adams et al.
patent: 4837460 (1989-06-01), Uchida
patent: 5151619 (1992-09-01), Austin et al.
patent: 5160855 (1992-11-01), Dobberpuhl
patent: 5379174 (1995-01-01), Kasamoto
patent: 5760618 (1998-06-01), Deliyannides et al.
Patent Abstracts of Japan, vol. 014, No. 320 (E-0950), Jul. 10, 1990 & JP 02 105624 A, Apr. 18, 1990.
Patent Abstracts of Japan, vol. 006, No. 081 (E-107), May 19, 1982 & JP 57 017227 A, Jan. 28, 1982.

Affiliated with

Also associated with

Rating

Output driver circuit in semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Output driver circuit in semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Output driver circuit in semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1123743