Output circuit provided with source follower circuit having depl

Details Output circuit provided with source follower circuit having depl Output circuit provided with source follower circuit having depl

1995-06-16

1997-07-08

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257316, 257291, 257402, 257403, H01L 2978

Patent

active

056464282

ABSTRACT:
A depletion type transistor formed on a semiconductor substrate includes a drain region and a source region formed in distinct areas on the substrate. An inversion layer is formed in the surface area between the drain and the source regions. The transistor further includes two insulated gates: a floating gate located above the substrate and insulated from the inversion layer by an insulating layer in such a way as to cover the inversion layer, and a control gate provided above the floating gate and insulated from the floating gate by the insulating layer.

REFERENCES:
patent: 4830974 (1989-05-01), Chang et al.
patent: 4984045 (1991-01-01), Matsunaga
patent: 5262987 (1993-11-01), Kojima
patent: 5438211 (1995-08-01), Nakamura et al.

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