Output circuit for power IC with high breakdown voltage

Details Output circuit for power IC with high breakdown voltage Output circuit for power IC with high breakdown voltage

1998-04-03

2000-05-02

Kim, Jung Ho

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Amplitude control

327112, 326 68, 326 80, H03L 500

Patent

active

060577266

ABSTRACT:
An output circuit for a high-breakdown-voltage power IC is provided. The output circuit includes a level-shift circuit on constant-current type including an output terminal connected to the gate of a p-channel MOSFET with a high breakdown voltage; a totem-pole circuit including an n-channel MOSFET with a high breakdown voltage on the high potential side of the totem-pole circuit, the gate of which is connected to the drain of the MOSFET via a high resistance; an n-channel MOSFET with a high breakdown voltage on the low potential side of the totem-pole circuit, and one single power supply having a plurality of terminals, the voltages thereof are different, used for a low-voltage power supply for driving the level-shift circuit and a high-voltage power supply for driving the totem-pole circuit.

REFERENCES:
patent: 5338978 (1994-08-01), Larsen et al.
patent: 5352942 (1994-10-01), Tanaka et al.
patent: 5510731 (1996-04-01), Dingwall
patent: 5786723 (1998-07-01), Kim

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