Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1991-06-17
1993-03-09
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
377 60, 257231, 257242, 257336, 257403, 257408, 257218, 257222, 257239, H01L 297, H01L 2910, H01L 2986
Patent
active
051929902
ABSTRACT:
An output circuit for sequentially receiving and converting charge collected in the photoelements of an image sensor and converting such charge into an output voltage. The output circuit includes a buried-channel LDD transistor having gate, source and drain electrodes. The source electrode provides a floating diffusion. When the transistor is turned off, a potential well is provided in the floating diffusion which collects charge. An output source-follower amplifier also employing buried-channel LDD transistors is connected to the floating diffusion and produces the output voltage.
REFERENCES:
patent: 4574295 (1986-03-01), Tanikawa et al.
patent: 4811371 (1989-03-01), Tower
Eastman Kodak Company
James Andrew J.
Ngo Ngan Van
Owens Raymond L.
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