Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1993-04-02
1994-03-15
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257236, 257249, 377 60, 377 62, 377 63, H01L 2978
Patent
active
052948170
ABSTRACT:
In an output circuit for a charge transfer device, a floating diffusion region is connected to a source side gate electrode of a double-gate read-out field effect transistor having its drain side gate electrode connected to the drain of the read-out transistor itself. Thus, the capacitance between the gate of the read-out transistor connected to the floating diffusion region and the drain of the read-out transistor can be made small, so that the total capacitance of the floating diffusion region is correspondingly reduced, with the result that a high detection sensitivity can be realized.
REFERENCES:
patent: 4646119 (1987-02-01), Kosonocky
patent: 5192990 (1993-03-01), Stevens
NEC Corporation
Ngo Ngan
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