Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1994-01-12
1995-07-11
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257249, 257368, 377 60, 377 63, H01L 2978
Patent
active
054323649
ABSTRACT:
An output circuit device for detecting and converting signal charge transferred thereto from a charge transfer section of a CCD into a signal voltage his constructed such that a gate oxide film of a driving side MOS transistor of a first stage source follower which receives signal charge is formed as a thinner film than gate oxide films of the other MOS transistors in the same circuit to reduce the 1/f noise.
REFERENCES:
patent: 4011471 (1977-03-01), Rockett, Jr.
patent: 5192990 (1993-03-01), Stevens
patent: 5309005 (1994-05-01), Nagakawa et al.
Mori Hiroyuki
Nishima Osamu
Ohki Hiroaki
Suzuki Junya
Ngo Ngan V.
Sony Corporation
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