Output circuit device for a charge transfer element having tripa

Details Output circuit device for a charge transfer element having tripa Output circuit device for a charge transfer element having tripa

1995-02-24

1996-03-12

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257344, 257408, 257655, H01L 27148, H01L 29768

Patent

active

054988870

ABSTRACT:
A first diffusion layer in which phosphor of a low concentration is diffused is formed in a semiconductor body, and a second diffusion layer in which arsenic or antimony of a high concentration is formed in a portion of the upper face of the first diffusion layer. Further, a third diffusion layer in which phosphor of a high concentration is formed in the range of the second diffusion layer on the surface of the semiconductor body in a deeper condition than the first diffusion layer is formed.

REFERENCES:
patent: 4011471 (1977-08-01), Rockett, Jr.
patent: 4935379 (1990-06-01), Toyoshima
patent: 4962052 (1990-10-01), Asayama et al.
patent: 5015598 (1991-05-01), Verhaar
patent: 5192990 (1993-03-01), Stevens
patent: 5276346 (1994-01-01), Iwai et al.
patent: 5309005 (1994-05-01), Nagakawa et al.
patent: 5341011 (1994-08-01), Hshieh et al.

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