Output circuit and semiconductor integrated circuit device

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Signal transmission integrity or spurious noise override

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Details

327108, 327188, 327391, 327436, 327437, 327534, H03K 1716

Patent

active

054345260

ABSTRACT:
The present invention relates to an output circuit and a semiconductor integrated circuit. It is an object of the present invention to cut off a passage of a current through a forward parasitic diode of a transistor connected to a power supply line and a ground line at a time of suspension of output operation of the relevant circuit, and to raise an output high level to the utmost and lower an output low level to the utmost at time of normal output operation. A complementary MOS high impedance output circuit composed of a first field effect transistor and a second field effect transistor is structured so as to include provision of a third field effect transistor for controlling one of a state of a backgate of the first field effect transistor and a state of a backgate of the second field effect transistor and also to include provision of a fourth field effect transistor for controlling one of the state of the backgate of the first and second field effect transistor complementarily to the control of the state of the backgate of the third field effect transistor.

REFERENCES:
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patent: 4529897 (1985-07-01), Suzuki et al.
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patent: 5004936 (1991-04-01), Andresen
patent: 5041739 (1991-08-01), Goto
patent: 5157280 (1992-10-01), Schreck et al.
patent: 5157291 (1992-10-01), Shimoda
patent: 5172013 (1992-12-01), Matsumura
IBM Technical Disclosure Bulletin-Luckett, "Substrate Voltage Generator With Compensation For Depletion-Mode and Enhancement-Mode Field-Effect Transistors", 12/81, p. 3537.

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