Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-12-09
1996-04-16
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257779, H01L 2348, H01L 2352
Patent
active
055085628
ABSTRACT:
A chip type electronic part has an outer electrode structure appropriate mainly for reflow soldering.
An outermost layer of the outer electrode, provided at both end portions of the chip type electronic part, is to be soldered and made of a metal having a solidus temperature lower than 183.degree. C. and a difference not smaller than 10.degree. C., or more preferably not smaller than 30.degree. C., between its liquidus temperature and its solidus temperature, and is formed of a plating coat. The above-mentioned arrangement allows reflow soldering for the mounting of the chip type electronic part onto a substrate to be achieved at a low temperature while preventing the harmful influences of high-temperature soldering, and prevents the tombstone phenomenon in the soldering process.
REFERENCES:
patent: 3839727 (1974-10-01), Herdzik et al.
patent: 4055725 (1977-10-01), Boynton
patent: 4451972 (1984-06-01), Batinovich
patent: 4607277 (1986-08-01), Hassan et al.
IBM TDB vol. 16, No. 9, Feb. 1974 Method for Modified Solder Reflow Chip Joining, Dionne et al. p. 2900.
IBM TDB, vol. 16, No. 3, Aug. 1973, Floating Backbond Mounting for a Chip Device, Van Vestrout, p. 766.
Anao Kimiharu
Horie Shigeyuki
Arroyo T. M.
Crane Sara W.
Murata Manufacturing Co. Ltd.
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