Oscillation polarization mode selective semiconductor laser, lig

Details Oscillation polarization mode selective semiconductor laser, lig Oscillation polarization mode selective semiconductor laser, lig

1994-12-05

1996-12-17

Lee, John D.

Coherent light generators

Particular beam control device

Mode discrimination

372 27, 372 96, H01S 310

Patent

active

055861318

ABSTRACT:
A distributed feedback semiconductor laser selectively performs one of two oscillations in different polarization modes having different polarization planes. The laser includes a substrate, a light waveguide formed on the substrate, which at least partially includes an active layer, a diffraction grating formed around the waveguide, and an injecting unit for injecting a modulation current into a portion of the waveguide. The waveguide and the grating are constructed such that oscillation wavelengths of the polarization modes are different from each other and minimum values of threshold gain in the polarization modes near the Bragg wavelength are approximately equal to each other. The semiconductor laser can be driven by a minute modulation current and prevents degradation of response characteristics due to dynamic wavelength fluctuation in a high-frequency range when used in optical communication systems in which the switching of polarization mode is performed.

REFERENCES:
patent: 4612645 (1986-09-01), Liu et al.
patent: 4633474 (1986-12-01), Akiba et al.
patent: 4918701 (1990-04-01), Amann et al.
patent: 5155737 (1992-10-01), Ikeda et al.
patent: 5392308 (1995-02-01), Welch et al.
"Analysis of TE and TM Modes in DFB Lasers by Two-Dimensional Theory" by Yoshikazu Hori et al.; IEEE Journal Of Quantum Electronics. vol. 27; No. 7, Jul. 1991; pp. 1874-1885.
"Polarization switching in InGaAsP/InP distributed-feedback lasers with a strained active layer" by A. I. Guriev et al./ Soviet Technical Physics Ltrs. vol. 19, No. 12, Dec. 12, 1993, N.Y.; pp. 741-743.

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