Oscillation polarization mode selective semiconductor laser, lig

Details Oscillation polarization mode selective semiconductor laser, lig Oscillation polarization mode selective semiconductor laser, lig

1997-04-09

1998-08-04

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 27, H01S 318

Patent

active

057905819

ABSTRACT:
An oscillation polarization mode selective semiconductor laser for selectively performing one of oscillations in different polarization modes, is provided. The semiconductor laser includes a substrate, a laser structure formed on the substrate, and a phase shift region formed in the laser structure. The laser structure includes an active region in which population inversion is established by a current injection thereinto. At least a portion of the phase shift region has a strained quantum well structure in which degrees of a change in refractive index for internal light in different polarization modes due to a current injection thereinto are different from each other. The polarization mode of a light output from the laser can be changed by a small amount of current injected into the phase shift region, and fluctuation in the output intensity can be suppressed during a transition operation in polarization mode.

REFERENCES:
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patent: 5521754 (1996-05-01), Nitta et al.
Takayuki Matsuyama et al., "TM Mode Suppression Property of DFB Lasers with a Narrow Stripe Region", IEEE Photonics Technology Letters, vol. 2, No. 9 (Sep. 1990), pp. 612-613.

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