Oscillators – With distributed parameter resonator – Parallel wire type
Patent
1992-04-21
1994-03-01
Grimm, Siegfried H.
Oscillators
With distributed parameter resonator
Parallel wire type
331108D, 331117FE, 331117D, H03B 518
Patent
active
052911535
ABSTRACT:
An oscillating circuit includes a substrate, a FET formed on the substrate, a series feedback capacitor connected to the source of the FET, a microstrip line formed on the substrate and connected to the gate of the FET, and a dielectric resonator which is electromagnetically coupled to the microstrip line. The dielectric resonator is located near the microstrip line.
REFERENCES:
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patent: 4628283 (1986-12-01), Reynolds
patent: 4906946 (1990-03-01), Mekata et al.
C. Tstronos et al., "Stable Monolithic GaAs FET Oscillator", Electronics Letters, vol. 18, No. 8, Enage GB (Apr. 1982).
Patent Abstracts of Japan, vol. 013, No. 496 (E-843) Nov. 9, 1989 & JP-A-1 198 804 (Nippon Telegr & Teleph Corp.).
Patent Abstracts of Japan, vol. 011, No. 182 (E-515) Jun. 11, 1987 & JP-A62 013 105 (NEC Corp.).
D. Ch'en, "DBS High Volume Market for GaAs MMICs", Microwave Journal, vol. 26, No. 2, Dedham US, pp. 116-122 (Feb. 1983).
Philip G. Wilson and Richard D. Carver, "An Easy-To-Use FET DRO Design Procedure Suited To Most CAD Programs", IEEE MTT-S Digest, pp. 1033-1036 (1989).
Grimm Siegfried H.
Sumitomo Electric Industries Ltd.
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