Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1997-03-31
1999-05-11
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 28, 117213, 117935, C30B15/30
Patent
active
059023945
ABSTRACT:
A method is provided for stabilizing Czochralski (CZ) silicon melt by controlled oscillation of the crucible rotation during the stabilization period of the silicon melt to reduce the gas bubbles and unmelted polysilicon particles contained therein and thereby increase the yield and productivity of CZ silicon crystal production. The crucible rotation is controlled to follow an Oscillating Crucible Rotation (OCR) pattern or a saw tooth rotation pattern, which include rapid oscillations between a high rate of rotation and a low rate of rotation of the crucible during a period prior to the growth of the CZ crystal ingot.
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patent: 5474019 (1995-12-01), Akashi et al.
Scheel et al., "Crystal Rotation in Crystal Growth From Melt", IBM Technical Disclosure Bulletin, vol. 14, No. 5 pp. 169, Oct. 1971.
"Characterization of Silicon Crystals Grown By The Heat Exchanger Method", S. Hyland, et al., Proceedings of the Electrochemical Society; vol. 83-11, pp. 192-199, '1983.
"Silicon Ingot Growth By An Oscillating Crucible Technique", Katherine A. Dumas, et al., Proc SPIE-Photovoltaic for Solar Energy Applications; pp. 121-125; 1983.
"Directional Solidification of Silicon In Carbon Crucibles By An Oscillating Crucible Technique", T. Daud, et al., Conference record of the 16th IEEE Photovoltaic Specialists Conference; pp. 63-67; 1982.
Burkhart Charles Curtis
Colburn Bruce Laurence
Kunemund Robert
SEH America Inc.
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