Oscillating circuit device with a variable capacitor

Details Oscillating circuit device with a variable capacitor Oscillating circuit device with a variable capacitor

1992-04-24

1993-09-28

Mis, David

Oscillators

With distributed parameter resonator

331108C, 331117FE, 331117D, H03B 518

Patent

active

052489485

ABSTRACT:
The oscillating apparatus according to this invention includes a pulse doped FET 1, and a series feedback capacitor 2 connected to the source of the pulse doped FET 1. The pulse doped FET is a FET formed on a pulse doped epitaxial layer including a channel layer 23 with a high carrier density, and a cap layer 24 with a low carrier density formed on the channel layer 23. The series feedback capacitor 2 is a variable capacitor whose capacitance value increases when a gate bias voltage of the pulse doped FET 1 is changed to increase a drain current of the pulse doped FET 1. Consequently it is possible to reduce phase noises by controlling only the gate bias with an oscillation frequency set at a required value. As a result, the merits of the MMIC can be sufficiently utilized without the necessity of externally adding a dielectric resonator.

REFERENCES:
patent: 4481487 (1984-11-01), Brehm et al.
patent: 4905061 (1990-02-01), Ohmuro et al.
B. Roth et al, "A Varactor-Tuned Oscillator Using MMIVC Technology", Microwave Journal, vol. 33, No. 9, Dedham U.S., pp. 223-225, Sep. 1990.
M. G. McDermott et al, "monolithic Ka Band VCO Using Quarter Micron GaAs MESFETs and Integrated High-Q Varactors", 1990 IEEE MTT-S International Microwave Symposium Digest, vol. 1, Dallas, Texas, U.S., May 8-10, 1990.
K. Ohata, "Microwave Heterojunction Devices", 19th European Microwave Conference 89, Sep. 4-7, 1989, London, GB pp. 136-146.

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