Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-03-07
1999-07-27
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257 77, H01L 2348, H01L 2352, H01L 2940
Patent
active
059295236
ABSTRACT:
Metallic osmium on SiC (either .beta. or .alpha.)forms a contact that remains firmly attached to the SiC surface and forms an effective barrier against diffusion from the conductive metal. On n-type SiC, Os forms an abrupt Schottky rectifying junction having essentially unchanged operating characteristics to at least 1050.degree. C. and Schottky diodes that remain operable to 1175.degree. C. and a barrier height over 1.5 ev. On p-type SiC, Os forms an ohmic contact with specific contact resistance of <10.sup.-4 ohm-cm.sup.2. Ohmic and rectifying contacts to a TiC layer on a SiC substrate are formed by depositing a WC layer over the TiC layer, followed by a metallic W layer. Such contacts are stable to at least 1150.degree. C. Electrodes connect to the contacts either directly or via a protective bonding layer such as Pt or PtAu alloy.
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3C Semiconductor Corporation
Cao Phat X.
Chaudhuri Olik
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