Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1989-02-10
1990-09-11
Lieberman, Paul
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
264 66, 419 25, 419 29, 419 53, 423604, 423635, 501123, 502346, 505742, C01B 1314, C01F 1102, C01G 302, C04B 3560
Patent
active
049563360
ABSTRACT:
A superconductor material having a current density, J, of from about 30,000 to about 85,000 amps/cm.sup.2 at zero magnetic field and 77.degree. K. is disclosed. The 123 superconductor is of the formula L.sub.1 Ba.sub.2 Cu.sub.3 O.sub.6 +.delta. wherein L is preferably yttrium. The process comprises compacting the solid state reaction product of L.sub.1 Ba.sub.2 Cu.sub.3 O and then sintering the reaction product at a temperature between about 40.degree. C. to about 90.degree. C. below its melting point, i.e., for Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.6 +.delta. at a temperature of approximately 940.degree. C. The composition is then heated in a preheated chamber maintained at approximately 1090.degree. C. to about 1,200.degree. C. (approximately 1,100.degree. C. for Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.6 +.delta.) until it has been decomposed, and is then rapidly cooled to a temperature between about 10.degree. C. to about 30.degree. C. above its melting point, i.e. for Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.6 +.delta. a temperature of 1030.degree. C. and then is control cooled at a rate of 1.degree. C./hr until it reaches a temperature of about 20.degree. C. to about 40.degree. C. below its melting point, i.e., for Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.6 +.delta. a temperature of 980.degree. C. The composition is steadily held at this temperature for at least eight hours, and then cooled to a temperature of approximately 400.degree. C. below its melting point (for Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.6 +.delta. approximately a temperature of 600.degree. C.). The material is then slowly cooled by another 200.degree. C. and is then annealed in oxygen.
REFERENCES:
patent: 4824826 (1989-04-01), Damento et al.
Tajima et. al., "Composition Dependence . . . Y-Ba-Cu-O System", Jap. Jnl. Appl. Phys., vol. 26, No. 5, May 1987, pp. L845-L847.
Marshall et. al., "Ordered-Defect Structure in Epitaxial YBa.sub.2 Cu.sub.3 O.sub.7-x Thin Films", Phys. Rev. B, vol. 37 (16), Jun. 1, 1988, pp. 9353-9358.
Kumakura et. al., "Large Magnetization in YBa.sub.2 Cu.sub.3 O.sub.7 . . . ", Jap. Jnl. Appl. Phys. Lett., vol. 27 (2), Feb. 1988, pp. L188-L190.
Narayan et. al., "Microstructure and Properties of YBa.sub.2 C.sub.3 O.sub.9-x . . . ", Appl. Phys. Lett., 51(12), Sep. 21, 1987, pp. 940-942.
Salama Kamel
Selvamanickam Venkatakrishnan
Lieberman Paul
University of Houston - University Park
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