Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1993-09-28
1996-01-30
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257613, H01L 29161, H01L 2920, H01L 2922
Patent
active
054882320
ABSTRACT:
The present invention provides a semiconductor device comprising a first layer of a metal silicide and a second layer on the first metal silicide layer; the second layer comprising a semiconducting diamond film. The present invention also provides a method for making a semiconductor device comprising the steps of providing a layer of a transition metal silicide and forming a semiconducting diamond layer on the layer of transition metal silicide.
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Glass Jeffrey T.
Goeller Peter T.
Simendinger Denise T.
Ngo Ngan V.
North Carolina State University
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