Orientated group IV-VI semiconductor structure, and method...

Details Orientated group IV-VI semiconductor structure, and method... Orientated group IV-VI semiconductor structure, and method...

2005-02-04

2008-07-15

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S046010

Reexamination Certificate

active

07400663

ABSTRACT:
A method of growing and fabricating a group IV-VI semiconductor structure, for use in fabricating devices. In one embodiment, the group IV-VI semiconductor structure produced by the method of the present invention includes a group IV-VI material grown on a selected orientation of [110]. The devices fabricated can be a laser, detector, solar cell, thermal electrical cooling devices, etc. A laser device produced according to the present method will have a low threshold due to the lift-off of the energy degeneracy and low defect density. Growth on the [110] orientation also allows epitaxial growth of the semiconductor structure on a dissimilar substrate, which could improve the thermal dissipation and thus increase the operating temperature of the laser device.

REFERENCES:
patent: 4542512 (1985-09-01), Van Den Beemt
patent: 4633477 (1986-12-01), Morrison et al.
patent: 5834331 (1998-11-01), Razeghi
patent: 2002/0119680 (2002-08-01), Wang et al.
patent: 2002/0175324 (2002-11-01), Razeghi
patent: 2007/0071062 (2007-03-01), Eisler et al.

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