Organometallic vapor-phase epitaxy process using (CH.sub.3).sub.

Details Organometallic vapor-phase epitaxy process using (CH.sub.3).sub. Organometallic vapor-phase epitaxy process using (CH.sub.3).sub.

1992-07-09

1993-09-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437133, 437126, 437107, 148DIG110, H01L 2120

Patent

active

052448290

ABSTRACT:
The use of trimethylarsine in place of tertiary butyl arsine for low pressure organometallic vapor phase epitaxy of GaAs:C to enhance the carbon doping efficiency of CCl.sub.4. The hole concentration is three times higher with trimethylarsine then with tertiary butyl arsine in the layer grown under similar conditions. As a result, higher growth temperatures can be used with trimethyl arsine, yielding more stable carbon doping. Annealing at 650.degree. C. for 5 minutes does not degrade the trimethyl arsine-grown layers while the tertiary butyl arsine-grown layer shows decreases in both hole concentration and mobility. Also a high level of hydrogen atoms is detected in tertiary butyl arsine-grown GaAs:C. The hydrogen level is about 30 times lower in the layers grown with trimethyl arsine. The reduced hydrogen concentration is an added advantage of using trimethyl arsine since hydrogen is known to neutralize acceptors in GaAs to reduce the carrier concentrations.

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