Organometallic single source precursors for inorganic films coat

Synthetic resins or natural rubbers -- part of the class 520 ser – Synthetic resins – Treating polymer containing material or treating a solid...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

528395, 528425, 528503, C08F 600, C08J 300

Patent

active

061244279

ABSTRACT:
The invention is directed to making inorganic materials consisting of a metal and a group 16 element in the stoichiometric ratio of 2:3 from single source precursors having the same 2:3 metal to heteroatom stoichiometric ratio.
In particular, the invention discloses a process for making aluminum oxide from single source precursors that have an aluminum to oxygen ratio of 2:3. The precursors are organoaluminum tetrametallic compounds containing organooxy bridging groups and organo terminal groups. As these compounds tend to be viscous liquids or oils, they can be applied to a substrate surface then pyrolyzed to eliminate the organic ligands and produce aluminum oxide in situ, without using gas phase deposition techniques.

REFERENCES:
patent: 4698417 (1987-10-01), Morgan
patent: 5300320 (1994-04-01), Barron et al.
Lakhotia et al, "GaN Film Growth Using Single-Source Precursors", Chem. Mater. 1995 7, 546-552.
Atwood et al, "Dimeric Gallium and Indium Dialkylphosphido Complexes with Unusual Group 13-15 Stoichiometries", Organometallics 1993, 12, 3517-3521.
Hepp et al, "Sythesis and Decomposition Of a Novel Carboxylate Precursor To Indium Oxide", Mat. Res. Soc. Symp. Proc. vol. 335 .COPYRGT.1994.
Battiston et al, "Chemical vapour deposition and characterization of gallium oxide thin films", Thin Solid Films 279 (1996) 115-118.
Haanappel et al, Corrosion resistant coatings (A1.sub.2 0.sub.3) produced by metal organic chemical vapour deposition using aluminium-tri-sec-butoxide.
Temple et al, "Formation of Aluminum Oxide Films from Aluminum Hexafluoroacetylacetonate at 350-450.degree. C. Journal of Electronic Materials, vol. 19, No. 9 1990.
Maruyama et al, "Aluminum oxide thin films prepared by chemical vapor deposition from aluminum acetylacetonate", Appl. Phys. Lett. 60(3), Jan. 20, 1992.
Maruyama et al, Aluminum oxide thin films prepared by chemical vapor deposition from aluminum 2-ethylhexanoate, Appl. Phys. Lett. 58, May 13, 1991.
Kunicki et al, "Studies on the Reaction of Triethylaluminium with Methyl Alcohol", Bulletin of the Polish Academy of Sciences Chemistry vol. 33, No. 5-6, 1985.
Doub et al, "Oxidation of Triethylaluminum By Dry Air", Am. Chem. Soc. 69, 2714 (1947); 71, 2414 (1949).
Uetsuki et al, "A Study of the Structures of Aluminum Complexes with Isopropoxy and Methy Groups Using Pulsed NMR and Chemical Ionization Mass Spectrometry", Bulletin Of The Chemical Society of Japan, vol. 50(3), 673-679 (1977).
N. Ya. Turova et al, "Physico-Chemical and Structural Investigation of Aluminum Isopropoxide", Inorg. Nucl. Chem., vol. 41, pp. 5-33.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Organometallic single source precursors for inorganic films coat does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Organometallic single source precursors for inorganic films coat, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Organometallic single source precursors for inorganic films coat will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2101115

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.