Organometallic precursors in conjunction with rapid thermal anne

Details Organometallic precursors in conjunction with rapid thermal anne Organometallic precursors in conjunction with rapid thermal anne

1990-10-23

1993-06-08

Derrington, James

Coating processes

Heat decomposition of applied coating or base material

264 61, 501 12, B05D 302, C04B 3564

Patent

active

052177548

ABSTRACT:
An organometallic precursor mixture is formed containing desired components of a final ceramic. This precursor mixture is dissolved in an organic solvent. The dissolved mixture is then spin cast or otherwise evenly deposited onto a wafer substrate. Finally, the coated wafer substrate is annealed by a process of Rapid Thermal Annealing to produce a thin ceramic film and to remove any organic material. This process exhibits preferential crystal growth to produce a uniform thin film.

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