Organometallic iridium compound, process of producing the...

Organic compounds -- part of the class 532-570 series – Organic compounds – Heavy metal containing

Reexamination Certificate

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C427S252000, C427S587000

Reexamination Certificate

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06884902

ABSTRACT:
An organometallic compound having a low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, for forming an iridium-containing thin film by the CVD process is provided. The organometallic iridium compound is represented by the following general formula (1) or (2):wherein R1represents hydrogen or a lower alkyl group; R2to R7each represents hydrogen, a halogen, or the like, provided that specific combinations of R1to R7are excluded; R8represents a lower alkyl group; R9to R12each represents hydrogen, a halogen, or the like, provided that specific combinations of R8to R12are excluded. Iridium-containing thin films are produced by using the compound as a precursor by CVD process.

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patent: 11-292888 (1999-10-01), None
patent: WO 9101361 (1991-02-01), None
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