Organometallic adduct compounds

Details Organometallic adduct compounds Organometallic adduct compounds

1991-09-06

1993-08-10

Lusigan, Michael

Coating processes

Coating by vapor, gas, or smoke

Organic coating applied by vapor, gas, or smoke

556 1, 556 20, 556 30, 556174, 536176, C23C 1600

Patent

active

052347168

DESCRIPTION:

BRIEF SUMMARY
The invention relates to the use of organometallic adduct compounds containing, as metals, aluminium, gallium or indium, for the production of thin films or of epitaxic layers by gas phase deposition, and to new adducts containing gallium or indium.
The deposition of such layers either from pure elements of the third group or from combinations with other elements, such as, for example, gallium arsenide, indium phosphide or gallium phosphide, can be used for the production of electronic and optoelectronic switching elements, compound semiconductors and lasers. The deposition of these layers is effected from the gas phase.
The properties of these films depend on the deposition conditions and on the chemical composition of the film deposited.
All the known methods, such as the metal-organic chemical vapour deposition (MOCVD) method, the photo-metal-organic vapour phase (photo-MOVP) method in which the substances are decomposed by UV irradiation, the laser-chemical vapour deposition (laser CVD) method or the metal-organic magnetron scattering (MOMS) method, are suitable for deposition from the gas phase. The advantages compared with other methods are a controllable growth of the layer, an accurate doping control and also easy handling and convenience of production because of the normal pressure or low-pressure conditions.
In the MOCVD method organometallic compounds which decompose at a temperature below 1100.degree. C. with deposition of the metal are employed. Typical apparatus used at present for MOCVD consists of a "bubbler" having a feeder for the organometallic component, a reaction chamber containing the substrate to be coated and a source of a carrier gas which should be inert towards the organometallic component. The "bubbler" is kept at a constant, relatively low temperature which is preferably above the melting point of the organometallic compound, but far below its decomposition temperature. The reaction chamber or decomposition chamber is preferably at a very much higher temperature, which should be below 1100.degree. C., at which the organometallic compound is completely decomposed and the metal is deposited. The organometallic compound is brought into the vapour state by means of the carrier gas and is admitted into the decomposition chamber together with the carrier gas. The mass flow of the vapour can be controlled easily and thus controlled growth of the thin layers is also possible.
Hitherto metal alkyls, such as, for example, trimethylgallium, trimethylaluminium or trimethylindium, have been mainly used for gas phase deposition. However, these compounds are extremely sensitive to the air and self-ignitable and in some cases can decompose even at room temperature. Involved precautions are therefore necessary for the preparation, transport, storage and use of these compounds. Some rather more stable adducts of metal alkyls with Lewis bases, such as, for example, trimethylamine and triphenylphosphine, are also known (for example are described in British Patent 2,123,422, EP-A 108,469 or EP-A 176,537), but these have only a limited suitability for gas phase deposition because of their low vapour pressure.
However, in contrast with the adduct compounds to be used in accordance with the invention, these known adducts do not contain hydrogen atoms as a radical on the V element.
Organometallic compounds suitable for the MOCVD technique are known from German Offenlegungsschrift 3,631,469. The compounds described therein are, however, not adducts, but compounds which have been stabilised within the molecule.
It was therefore the object of the present invention to find organometallic adduct compounds which are simple to handle and stable at room temperature and which have a sufficiently high vapour pressure to be enabled to decompose from the gas phase and are consequently suitable for the various methods of gas phase deposition.
It has now been found that organometallic adduct compounds of the third and fifth main group, the compound of the fifth main group containing one or two hydrogen atoms, are e

REFERENCES:
M. Schirmaier et al., "Low Pressure Deposition of GaAs from Triethylgallium-diisopropylamin-adduct and Arsine," GaAs & Related Compounds, Seattle, 1991, Abstract and Summary.
Long, J. A. et al., Growth of Fe-Doped Sonic Insulating InP by MOCVD, Journal of Crystal Growth 69 (1984), pp. 10-14.
Maury, F. et al., Mass Spectrometric Study of the Pyrolysis of Organometallic Precursors Usable in GaAs Vapor Phase Epitaxy, Journal of Crystal Growth 91 (1988) pp. 97-104.
Bradley, Donald C. et al., The Volatilities of Some Adducts of Trimethyl Indian, Journal of Crystal Growth 92 (1988) pp. 37-45.

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