Organocuprous precursors for chemical vapor deposition of a copp

Details Organocuprous precursors for chemical vapor deposition of a copp Organocuprous precursors for chemical vapor deposition of a copp

1999-01-19

2000-07-18

Gonzalez, Porfirio Nazario

Organic compounds -- part of the class 532-570 series

Organic compounds

Heavy metal containing

556112, 427252, C07F 108, C23C 1618

Patent

active

060909641

ABSTRACT:
A liquid organocuprous compound of formula (I) of the present invention can be conveniently used in a low-temperature CVD process for the production of a contaminant-free copper film having good step-coverage and hole-filling properties: ##STR1## wherein: R.sup.1 represents a C.sub.3-8 cycloalkyl group, and

REFERENCES:
patent: 5144049 (1992-09-01), Norman et al.
patent: 5449799 (1995-09-01), Terfloth et al.
patent: 5663391 (1997-09-01), Machida et al.
patent: 5767301 (1998-06-01), Senzaki et al.

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