Organoaluminum precursor compounds

Details Organoaluminum precursor compounds Organoaluminum precursor compounds

2008-01-28

2009-11-10

Gonzalez, Porfirio Nazario (Department: 1621)

Coating processes

Coating by vapor, gas, or smoke

C556S176000

Reexamination Certificate

active

07615250

ABSTRACT:
This invention relates to organoaluminum precursor compounds represented by the formula:wherein R1, R2, R3and R4are the same or different and each represents hydrogen or an alkyl group having from 1 to about 3 carbon atoms, and R5represents an alkyl group having from 1 to about 3 carbon atoms. This invention also relates to processes for producing the organoaluminum precursor compounds and a method for producing a film or coating from the organoaluminum precursor compounds.

REFERENCES:
patent: 5880303 (1999-03-01), Choi
patent: 6143357 (2000-11-01), Shin et al.
patent: 7348445 (2008-03-01), Peters et al.
O.T. Beachley, Jr. and K. C. Racette. “Chelation in Organoaluminum-Nitrogen Chemistry.” Inorganic Chemistry, vol. 15, No. 9, 1976. pp. 2110-2115.
O.T. Beachley, Jr. and K. C. Racette. “Preparation and Properties of a Neutral, Chelated Four-Coordinate Organoaluminum-Nitrogen Derivative.” Inorganic Chemistry, vol. 14, No. 10, 1975. pp. 2534-2537.
Jayaprakash Khanderi, et al. “Ligand Stabilised Dialkyl Aluminium Amides As New Precursors For Aluminium Nitride Thin Films”. Journal of Materials Chemistry, 2004, 14, pp. 3210-3214.
Jae E. Park, et al. “Reactions of AIR3(R=Me, Et) with H2NCH2CH2NMe2: Synthesis and Characterization of Amido- and Imidoalanes.” Organometallics 1999, 18. pp. 1059-1067.

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