Organoaluminum precursor compounds

Details Organoaluminum precursor compounds Organoaluminum precursor compounds

2008-03-25

2008-03-25

Nazario-Gonzalez, Porfirio (Department: 1621)

Organic compounds -- part of the class 532-570 series

Organic compounds

Aluminum containing

C427S248100, C427S372200, C427S532000

Reexamination Certificate

active

07348445

ABSTRACT:
This invention relates to organoaluminum precursor compounds represented by the formula:wherein R1, R2, R3and R4are the same or different and each represents hydrogen or an alkyl group having from 1 to about 3 carbon atoms, and R5represents an alkyl group having from 1 to about 3 carbon atoms. This invention also relates to processes for producing the organoaluminum precursor compounds and a method for producing a film or coating from the organoaluminum precursor compounds.

REFERENCES:
patent: 5880303 (1999-03-01), Choi
patent: 6143357 (2000-11-01), Shin et al.
Park et al., Organometallics, vol. 18, No. 6, pp. 1059-1067 (1999).
O.T. Beachley et al., “Chelation in Organoaluminum-Nitrogen Chemistry”,Inorganic Chemistry, vol. 15, No. 9, 1976.
O.T. Beachley et al., “Preparation and Properties of a Neutral, Chelated Four-Coordinate Organoaluminum-Nitrogen Derivative”,Inorganic Chemistry, vol. 14, No. 10, 1975.
Jayaprakash Khanderi et al., Ligand stabilized dialkyl aluminiium amides as new precursors for aluminium nitride thin films:,J Mater Chem., 2004, 14, 3210-3214.

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