Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-12-27
2010-12-14
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51005, C257SE21625, C257SE21639, C438S099000, C438S158000, C438S287000
Reexamination Certificate
active
07851788
ABSTRACT:
To provide an organic transistor which can achieve a reduced leak current from a gate electrode. An organic transistor including a substrate1, a pair of a source electrode4and a drain electrode5, an organic semiconductor layer6provided between the source electrode4and the drain electrode5, and a gate electrode2provided in association with the organic semiconductor6with a gate insulating layer3interposed therebetween, wherein the gate insulating layer3has a stacked structure including at least an organic insulating layer3aand an inorganic barrier layer3b.
REFERENCES:
patent: 6344660 (2002-02-01), Dimitrakopoulos et al.
patent: 6380011 (2002-04-01), Yamazaki et al.
patent: 7005674 (2006-02-01), Lee et al.
patent: 7151276 (2006-12-01), Gerlach et al.
patent: 7364940 (2008-04-01), Kim et al.
patent: 7692184 (2010-04-01), Koinuma et al.
patent: 2003/0102471 (2003-06-01), Kelley et al.
patent: 2003/0102472 (2003-06-01), Kelley et al.
patent: 2004/0222412 (2004-11-01), Bai et al.
patent: 2005/0189536 (2005-09-01), Zschieschang et al.
patent: 2005/0263765 (2005-12-01), Maekawa
patent: 2005/0285102 (2005-12-01), Koo et al.
patent: 2006/0027805 (2006-02-01), Koo et al.
patent: 2006/0151781 (2006-07-01), Kim et al.
patent: 2006/0157692 (2006-07-01), Wada et al.
patent: 2006/0202191 (2006-09-01), Gerlach et al.
patent: 2006/0214154 (2006-09-01), Yang et al.
patent: 2007/0051947 (2007-03-01), Nakayama et al.
patent: 1582505 (2005-02-01), None
patent: 1713409 (2005-12-01), None
patent: 1738070 (2006-02-01), None
patent: 2005-093700 (2005-04-01), None
patent: 2005-509298 (2005-04-01), None
patent: 2005-509299 (2005-04-01), None
patent: 2006-013468 (2006-01-01), None
patent: 2006-013480 (2006-01-01), None
patent: 2006-049836 (2006-02-01), None
patent: 10-2005-0039730 (2005-04-01), None
patent: 10-2005-0039731 (2005-04-01), None
patent: 10-2005-0123332 (2005-12-01), None
patent: 10-2006-0013598 (2006-02-01), None
patent: 03/041185 (2003-05-01), None
patent: 03/041186 (2003-05-01), None
patent: 2006/019157 (2006-02-01), None
International Search Report mailed Mar. 27, 2007 in the International (PCT) Application of which the present application is the U.S. National Stage.
International Preliminary Report on Patentability (English language) mailed on Oct. 9, 2008.
Malsawma Lex
Pioneer Corporation
Wenderoth , Lind & Ponack, L.L.P.
LandOfFree
Organic transistor and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Organic transistor and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Organic transistor and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4160286