Organic transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S041000, C257S043000, C257S050000

Reexamination Certificate

active

07126153

ABSTRACT:
An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor layer between a source electrode and a drain electrode, and gate electrodes shaped like a comb or a mesh, which are provided at intervals approximately in the central part of the organic semiconductor layer approximately parallel to the source electrode and the drain electrode. The organic semiconductor layer consists of an electric field luminescent organic semiconductor material such as compounds of naphthalene, anthracene, tetracene, pentacene, hexacene, a phthalocyanine system compound, an azo system compound, a perylene system compound, a triphenylmethane compound, a stilbene compound, poly N-vinyl carbazole, and poly vinyl pyrene.

REFERENCES:
patent: 4883766 (1989-11-01), Ishida et al.
patent: 5061974 (1991-10-01), Onodera et al.
patent: 5294815 (1994-03-01), Iechi
patent: 5362673 (1994-11-01), Iechi
patent: 5555219 (1996-09-01), Akiyama et al.
patent: 5610853 (1997-03-01), Akiyama et al.
patent: 5684523 (1997-11-01), Satoh et al.
patent: 5729262 (1998-03-01), Akiyama et al.
patent: 5835837 (1998-11-01), Saitoh et al.
patent: 5900336 (1999-05-01), Kabata et al.
patent: 6068953 (2000-05-01), Matsumoto et al.
patent: 6391471 (2002-05-01), Hiraoka et al.
patent: 6414732 (2002-07-01), Matsumoto et al.
patent: 6559473 (2003-05-01), Yu et al.
patent: 2003/0015698 (2003-01-01), Baldo et al.
patent: 10270712 (1998-10-01), None
U.S. Appl. No. 09/609,900 of Oblon et al.
“Low-Cost all-polymer Integrated Circuits,” C.J. Drury et al., Appl. Phys. Lett. vol. 73, No. 1, 1998, pp. 108-110.
Device Operating of Schottky Gate Type Static Induction Transistor Using Copper-Phthalocyanine Evaporated Films, Dong Xing Wang et al., T. IEEE Japan, vol. 118-A, No. 10, 1998, pp. 1166-1171.
K. Kudo et al. (1998) “Schottky gate static induction transistor using copper phthalocyanine Films”, Thin Solid Films, 331, pp. 51-54.
K. Kudo et al. (2000) “Organic static induction transistor for display devices”, Synthetic Metals, 111-112, pp. 11-14.
K. Ikegami et al. (May 2000) “Fabrication of hybrid organic electroluminescence transistor”, Technical Report of IEICE, OME2000-20, pp. 47-51.
S. Kuniyoshi et al. (Jul. 2000) “Space-Charge Conduction in a Copper Phthalocyanine Static Induction Transistor”, IEICE Trans. Electron., vol. E83-C, No. 7, pp. 1111-1113.
K. Ikegami et al. (2001) “Hybrid organic light emitting transistor”, Technical Report of IEICE, EID2000-323, OME2000-172, pp. 1-5.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Organic transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Organic transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Organic transistor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3651622

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.