Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2011-03-01
2011-03-01
Smith, Matthew S (Department: 2823)
Semiconductor device manufacturing: process
Having organic semiconductive component
C438S158000, C438S216000, C438S287000, C257S040000, C257SE51005, C257SE51006, C257SE51007
Reexamination Certificate
active
07897430
ABSTRACT:
The present invention relates to an organic thin film transistor comprising a photocurable transparent inorganic/polymer composite layer as a gate insulator layer in which metal oxide nanoparticles are generated within a photocurable transparent polymer through sol-gel and photocuring reactions and whose permittivity is easily regulated; and a fabrication method thereof. Since the organic thin film transistor according to the present invention utilizes the photocurable transparent inorganic/polymer composite layer showing a significantly high and readily controllable permittivity as a gate insulator, it is capable of operating under low voltage conditions and has a high on/off current ratio due to low leakage current. Further, the organic thin film transistor according to the present invention preserves the unique properties of the photocurable transparent polymer, enabling the formation of a photocurable micropattern of a gate insulator having high processibility.
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H. Shirakawa, et al., “Synthesis of Electrically Conducting Organic Polymers: Halogen Derivatives of Polyacetylene, (CH)x,” 1977, J.C.S. Chem Comm. 578, Heffers Printers Ltd., Cambridge, England.
Korean Notice of Allowance dated May 31, 2010.
Choi June Whan
Kim Dong Young
Kim Jai Kyeong
Yoon Ho Gyu
Day Jones
Korea Institute of Science and Technology
Scarlett Shaka
Smith Matthew S
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