Organic thin film transistors

Semiconductor device manufacturing: process – Having organic semiconductive component

Reexamination Certificate

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C257SE21007, C257SE21461, C257SE21535

Reexamination Certificate

active

07867813

ABSTRACT:
A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.

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Combined Search and Examination Report for GB 0712268.2 dated Oct. 23, 2007.

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