Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2011-04-12
2011-04-12
Thomas, Tom (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
Reexamination Certificate
active
07923718
ABSTRACT:
A thin-film transistor (TFT) with dual-layer source and drain electrodes is provided. Each source and drain electrode comprises a first layer and a second layer. The first layer has a work function which differs from the energy level of the semiconductor by at least 0.5 eV and the second layer has a work function matching the energy level of the semiconductor. The semiconductor has a short channel length.
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Ong Beng S.
Wu Yiliang
Fay Sharpe LLP
Kolahdouzan Hajar
Thomas Tom
Xerox Corporation
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