Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2011-01-18
2011-01-18
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S092000, C257S410000, C257SE51006, C257SE51007, C257SE21535, C438S099000, C438S082000, C438S199000, C438S216000
Reexamination Certificate
active
07872257
ABSTRACT:
An n-type TFT and a p-type TFT are realized by selectively changing only a cover coat without changing a TFT material using an equation for applying the magnitude of a difference in the Fermi energy between an interface of semiconductor and an electrode and between an interface of semiconductor and insulator. At this time, in order to configure a predetermined circuit, the process is performed, as a source electrode and a drain electrode of the p-type TFT and a source electrode and a drain electrode of the n-type TFT being connected all, respectively, and an unnecessary interconnection is cut by irradiating light using a scanning laser exposure apparatus or the like.
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Arai Tadashi
Fujimori Masaaki
Hashizume Tomihiro
Shiba Takeo
Suwa Yuji
Antonelli, Terry Stout & Kraus, LLP.
Hitachi , Ltd.
Mandala Victor A
Moore Whitney
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