Organic thin film transistor and organic thin film...

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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C257SE51006, C438S099000

Reexamination Certificate

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08030648

ABSTRACT:
Disclosed is a stable organic thin film transistor having good switching property and a process for manufacturing an organic thin film transistor by a simple method. The organic thin film transistor comprises a substrate and provided thereon, at least a source electrode, a drain electrode, an organic semiconductor connecting the source electrode and the drain electrode, a gate electrode, and an insulating layer composed of a plurality of layers, the insulating layer being provided between the gate electrode and the organic semiconductor, wherein the organic thin film transistor comprises a mercapto group-containing compound represented by the following formula (I),in-line-formulae description="In-line Formulae" end="lead"?(R)n—Si(A)3-n-(B)  Formula (I)in-line-formulae description="In-line Formulae" end="tail"?wherein R represents an alkyl group having a carbon atom number of not more than 8; A represents an alkoxy group or a halogen atom; B represents a substituent containing an SH group; and n is an integer of from 0 to 2.

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patent: 2006-216654 (2006-08-01), None

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