Organic thin film transistor and method of fabricating the same

Details Organic thin film transistor and method of fabricating the same Organic thin film transistor and method of fabricating the same

2011-06-14

2011-06-14

Such, Matthew W (Department: 2891)

Semiconductor device manufacturing: process

Having organic semiconductive component

C257SE51006

Reexamination Certificate

active

07960207

ABSTRACT:
An organic thin film transistor (OTFT) and a method of fabricating the same are provided in which an organic layer and metal interconnections are formed to have certain linewidths and shapes such that a degradation of device characteristics is prevented. The method includes providing a substrate, forming a gate electrode on the substrate, forming a gate insulating layer on the gate electrode, forming source and drain electrodes on the gate insulating layer, and forming a semiconductor layer on the source and drain electrodes. The gate electrode is formed by an inkjet printing method and ablated by a laser.

REFERENCES:
patent: 5989945 (1999-11-01), Yuda
patent: 2003/0075532 (2003-04-01), Salmon et al.
patent: 2003/0160235 (2003-08-01), Hirai
patent: 2004/0266054 (2004-12-01), Brazis et al.
patent: 2005/0026344 (2005-02-01), Weng et al.
patent: 2005/0211975 (2005-09-01), Kawasaki et al.
patent: 2005/0258487 (2005-11-01), Suh et al.
patent: 2006/0097254 (2006-05-01), Ahn et al.
patent: 2007/0042525 (2007-02-01), Dimmler
patent: 2008/0194056 (2008-08-01), Cain et al.
patent: 2009/0189147 (2009-07-01), Fix et al.
patent: 1-130494 (1989-05-01), None
patent: 5-95178 (1993-04-01), None
patent: 9-61296 (1997-03-01), None
patent: 2004-281477 (2004-10-01), None
patent: 2005-223286 (2005-08-01), None
patent: 10-2004-0015717 (2004-02-01), None
patent: 10-2004-0097231 (2004-11-01), None
patent: 10-2005-0111487 (2005-11-01), None
patent: 10-2006-0108945 (2006-10-01), None
patent: WO 02/095805 (2002-11-01), None
patent: WO 2005069399 (2005-07-01), None
patent: WO 2006106312 (2006-10-01), None
Yagi, I., et al., “Direct Observation of Contact and Channel Resistance in Pentacene Four-Terminal Thin-Film Transistor Patterned by Laser Ablation Method.” Appl. Phys. Lett., vol. 84, No. 5 (Feb. 2, 2004): pp. 813-815.
Roichman, Y. & Tessler, N. “Structures of Polymer Field-Effect Transistor: Experimental and Numerical Analysis.” Appl. Phys. Lett., vol. 80 (2002): pp. 151-153.
Schrodner, M., et al. “Polymer Field Effect Transistors Made by Laser Patterning.” Org. Elect., vol. 6 (2005): pp. 161-167.
Parashkov, P., et al. “Organic Vertical-Channel Transistors Structured Using Excimer Laser.” Appl. Phys. Lett., vol. 85 (2004): pp. 5751-5753.
Patent Abstracts of Japan, Publication No. 01-130494, dated May 23, 1989 in the name of Toshinao Suzuki et al.
Patent Abstracts of Japan, Publication No. 05-195178, dated Apr. 16, 1993 in the name of Shoji Kiribayshi.
Patent Abstracts of Japan, Publication No. 09-061296, dated Mar. 7, 1997 in the name of Akihiro Yamanaka et al.
Patent Abstracts of Japan, Publication No. 2005-223286, dated Aug. 18, 2005 in the name of Takeo Kawase et al.
Korean Patent Abstracts, Publication No. 1020050111487 A dated Nov. 25, 2005 in the name of Min Chul Suh et al.
Korean Patent Abstracts, Publication No. 1020060108945 A dated Oct. 18, 2006 in the name of Taek Ahn et al.
English Abstract of WO/1997/043689 corresponding to KR 10-2004-0097231 listed above, which also relates to U.S. 5,989,945 listed above.
Yagi, Iwao et al., Applied Physics Letters,Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method, Feb. 2, 2004, 3 pgs (pp. 813-815), vol. 84, No. 5.
Office action dated Nov. 17, 2006 for corresponding Korean Patent Application No. 10-2005-0108043.
Patent Abstracts of Japan, Publication No. 2004-281477; Publication Date: Oct. 7, 2004; in the name of Hirai.

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