Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2007-09-04
2007-09-04
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Having organic semiconductive component
C438S158000
Reexamination Certificate
active
10840637
ABSTRACT:
An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.
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Ho Jia-Chong
Hsieh Cheng-Chung
Hu Tarng-Shiang
Huang Liang-Ying
Huang Wen-Kuei
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