Organic stripping compositions and method for using same

Compositions – Compositions containing a single chemical reactant or plural... – Organic reactant

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134 3, 134 38, 134 41, 252143, 252148, 252171, C11D 708, C11D 732, C11D 734, C11D 750

Patent

active

042150051

ABSTRACT:
Improved organic stripping compositions useful in removing polymeric organic substances, such as photoresists, from aluminized inorganic substrates, which comprise one or more organic sulfonic acids, such as linear dodecylbenzene-sulfonic acid, toluenesulfonic acid and phenolsulfonic acid, one or more organic solvents and, optionally, phenol. A hydrogen fluoride complex is incorporated into the composition comprising HF at about 5 to 300 pm by weight of fluoride per weight of composition and at least about 0.1 mols per mol of HF of a complexing agent, such as morpholine or dimethyl formamide, having a nitrogen with an unshared electron pair. The hydrogen fluoride complex reduces aluminum corrosion during stripping even after repeated use at high temperature as is common in industrial semiconductor photoresist stripping.

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