Organic spin-on anti-reflective coating over inorganic...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S069000, C438S082000

Reexamination Certificate

active

06867063

ABSTRACT:
A method of manufacturing a semiconductor. A conventional bottom anti-reflective coating is applied over a reflective surface, for example an inter-layer dielectric. A second anti-reflective coating is deposited over the first anti-reflective coating. The second anti-reflective coating is organic and may be deposited through a spin-on process. The organic anti-reflective coating may be deposited with more exacting optical properties and better control of the layer thickness than conventional bottom anti-reflective coatings applied via chemical vapor deposition processes. The combination of the two layers of anti-reflective materials, the materials having differing optical properties, demonstrates superior control of reflections from underlying materials compared with conventional art methods. More particularly, an organic anti-reflective coating in conjunction with an inorganic anti-reflective coating may cancel reflections across a wide range of thicknesses in an underlying dielectric layer. The superior anti-reflective structure of embodiments of the present invention allow patterning of semiconductor structures at smaller critical dimensions with greater accuracy, rendering competitive advantages in device speed, density and cost.

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patent: 2002124518 (2002-04-01), None

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