Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-09-05
2006-09-05
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
Reexamination Certificate
active
07102154
ABSTRACT:
There are provided an organic semiconductor structure comprising an organic semiconductor layer, which is large in size and homogeneous and has high charge transfer characteristics, a process for producing the same, and an organic semiconductor device. The organic semiconductor structure has, in at least a part thereof, an organic semiconductor layer comprising an aligned liquid crystalline organic semiconductor material. The liquid crystalline organic semiconductor material comprises an organic compound having a core comprising L 6 π electron rings, M 8 π electron rings, N 10 π electron rings, O 12 π electron rings, P 14 π electron rings, Q 16 π electron rings, R 18 π electron rings, S 20 π electron rings, T 22 π electron rings, U 24 π electron rings, and V 26 π electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6. The liquid crystalline organic semiconductor material exhibits at least one liquid crystal state at a temperature below the heat decomposition temperature thereof.
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International Search Report for PCT/JP03/01339; ISA/JP; Mailed: Apr. 15, 2003.
Akada Masanori
Hanna Jun-Ichi
Maeda Hiroki
Dai Nippon Printing Co. LTD
Harness & Dickey & Pierce P.L.C.
Pham Long
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