Organic semiconductor material and organic semiconductor...

Details Organic semiconductor material and organic semiconductor... Organic semiconductor material and organic semiconductor...

2008-04-29

2008-04-29

Shushu, Callie (Department: 1794)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C252S299010, C438S099000

Reexamination Certificate

active

10698002

ABSTRACT:
An organic semiconductor material having high charge mobility characteristics and an organic semiconductor element is provided. The organic semiconductor material has rodlike low-molecular liquid crystallinity, including a skeleton structure comprising L 6 π electron aromatic rings, M 10 π electron aromatic rings, and N 14π electron aromatic rings, wherein L, M, and N are each an integer of 0 (zero) to 4 and L+M+N=1 to 4; and a terminal structure attached to both ends of the skeleton structure. The terminal structure can develop liquid crystallinity. The phase angle θ of impedance of the organic semiconductor material is −80°≦θ≦−90° as determined in the measurement of impedance in a frequency f range of 100 Hz≦f≦1 MHz in such a state that the organic semiconductor material in an isotropic phase state is held between a pair of opposed substrates with an interelectrode spacing of 9 μm.

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patent: 2001-75297 (2001-03-01), None
patent: EP 1489141 (2004-12-01), None
JPO Website Machine English Translation of JP 2001-075297, Junichi Hanna et al., Mar. 23, 2001.

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