Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2007-08-21
2007-08-21
Wu, Shean C (Department: 1756)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257SE51047, C257SE51049, C438S099000
Reexamination Certificate
active
10787895
ABSTRACT:
There is provided a liquid crystalline material, suitable for use as an organic semiconductor material, in which, even when the charge transport distance is long, the charge transport capability is satisfactory, the charge mobility is high, and the dependence of the charge transport properties upon field strength is small. The organic semiconductor material having rodlike low-molecular weight liquid crystallinity comprises: a core structure comprising L 6 π electron rings, M 8 π electron rings, N 10 π electron rings, O 12 π electron rings, P 14 π electron rings, Q 16 π electron rings, R 18 π electron rings, S 20 π electron rings, T 22 π electron rings, U 24 π electron rings, and V 26 π electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6; and a terminal structure attached to at least one end of the core structure, the terminal structure being capable of developing liquid crystallinity.
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English translation by computer for JP 08-181364, http://www4.ipdl.ncipi.go.jp/Tokujitu/PAJdetail.ipdl?N0000=60&N0120=01&N2001=2&N3001=H08-181364.
English translation by computer for JP 2001-33990, http://www4.ipdl.ncipi.go.jp/Tokujitu/PAJdetail.ipdl?N0000=60&N0120=01&N2001=2&N3001=2001-033990.
English translation by computer for JP 2001-75297, http://www4.ipdl.ncipi.go.jp/Tokujitu/PAJdetail.ipdl?N0000=60&N0120=01&N2001=2&N3001=2001-075297.
Hanna Jun-Ichi
Iino Hiroaki
Maeda Hiroki
Dai Nippon Printing Co. Ltd.
Harness & Dickey & Pierce P.L.C.
Wu Shean C
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