Organic semiconductor element having high insulation...

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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C257S642000, C257S759000, C438S082000, C438S099000

Reexamination Certificate

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07081640

ABSTRACT:
The present invention provides an organic semiconductor element in which the insulation strength of the insulation layer and the carrier mobility of the organic semiconductor are both high. The semiconductor layer is an organic semiconductor element consisting of an organic compound. A gate oxide film consisting of an oxide of the gate electrode material is provided between the gate electrode and the gate insulation layer. The gate insulation layer consists of an organic compound.

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Lightweight and Flexible Organic Transistors Will Change the Style of Displays (NIKKEI ELECTRONICS 2001.10.8).

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