Organic semiconductor devices and methods of fabrication

Details Organic semiconductor devices and methods of fabrication Organic semiconductor devices and methods of fabrication

2005-05-10

2005-05-10

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C438S048000

Reexamination Certificate

active

06891191

ABSTRACT:
The present invention discloses a vertical junction structure with multi-PN channels, which provides a maximum interface between p-type and n-type materials in order to assist the charge separation, and offers continuous phases in both p- and n-type materials for charge transport in opposite directions.The present invention also provides methods for constructing the device structures. The main steps include 1) assembling a porous structure or a framework with semiconductor materials of one conduction type on a first electrode, 2) filling pores or coating the framework made from the materials in step 1 with semiconductors or precursors of conducting polymer of a opposite conduction type, 3) chemically and physically treating the system to form closed packed multi-PN channels.

REFERENCES:
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N. S. Sariciftci, L. Smilowitz, A. J. Heeger, and F. Wudl, Science 258, 1474 (1992).
W.H.Huynh, J.J.Dittmer, and A.P. Alivisatos, Science, 295: 2425 (2002).

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